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    Please use this identifier to cite or link to this item: http://ir.lib.ksu.edu.tw/handle/987654321/9811


    Title: Al-doping effect on structural, transport and optical properties of ZnO films by simultaneous RF and DC magnetron sputtering
    Authors: 呂正中
    J.J. Lu
    S.Y. Tsai
    Y.M. Lu
    T.C. Lin
    K.J. Gana
    Contributor: 機械工程系
    Keywords: A. Al-doped ZnO films
    D. Semiconductor-metal transition
    Date: 2010-01-05
    Issue Date: 2010-04-22 17:00:30 (UTC+8)
    Abstract: Transparent and conductive Al-doped ZnO films have been prepared by simultaneous RF and DC
    magnetron sputtering. In order to study the properties of the Al-doped ZnO films, we performed Xray
    diffraction, X-ray absorption spectroscopy, temperature dependence of electrical resistance and Hall
    measurements, as well as optical transmission spectroscopy. The results revealed that all the samples
    were polycrystalline with a strong preferential c-axis orientation. A minimum resistivity of 7:13*10-3Ωcm was obtained, and a metallic-type conducting behavior was observed for the film at 50 W. Our
    present work suggests that the electrical transport property of the Al-doped ZnO films is closely related to
    the crystallinity. A large number of defects due to poor crystallinity and the induced stress field are able
    to immobilize the free carrier thereby reducing the conductivity.
    Relation: Solid State Communications 149 (2009) 2177-2180
    Appears in Collections:[機械工程系所] 期刊論文

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