English  |  正體中文  |  简体中文  |  Items with full text/Total items : 25504/26098 (98%)
Visitors : 6740386      Online Users : 47
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version


    Please use this identifier to cite or link to this item: https://ir.lib.ksu.edu.tw/handle/987654321/9474


    Title: 真空熱處理改善直線式連續濺鍍氧化鋅摻鋁薄膜光電性質的可行性評估
    Authors: 張慎周
    Contributor: 電機工程系
    Keywords: 真空退火
    氧化鋅摻鋁
    直線式連續濺鍍
    vacuum annealing
    aluminum doped zinc oxide
    in-line sputtering
    Date: 2009-12-20
    Issue Date: 2010-03-22 10:33:17 (UTC+8)
    Abstract: 為了探討氧化鋅摻鋁薄膜經真空退火後電性與光學特性是否有所提升,本計畫使用直線
    連續式濺鍍機台沉積氧化鋅摻鋁薄膜,將氧化鋅摻鋁薄膜後續進行不同真空退火條件:300、
    400及500℃一小時。探討退火後經由霍爾量測其載子濃度、載子遷移率、電阻率,光譜儀量
    測光穿透率,SEM 觀察其表面形貌,XRD觀察其微結構變化,比較真空退火前後薄膜特性
    的變化,判斷真空退火是否可以改善直線連續式濺鍍製作的氧化鋅摻鋁薄膜的光電特性。
    經實驗後,最佳退火條件為製程基板不加溫進行真空退火500℃可得到6.69×10-4Ω-cm,
    平均光穿透率84%。經真空退火後皆可以在波長400nm 至1100nm 得到80%以上的平均光穿
    透率。由XRD 繞射圖結果發現在製程基板150℃經退火後,氧化鋅優選取向(002)面強度的降
    低,推測為經退火後薄膜應力由介面處開始釋放,在基板200℃進行真空退火後(002)面的強
    度增強,推測為藉由退火使得AZO 薄膜介面應力去釋放,在製程基板150℃時退火並無法將
    應力釋放完畢,製程基板200℃時退火使得大部份應力釋放完畢,並且由SEM 觀察薄膜表面
    由不規則的晶粒變成規則有秩序的排列,推測薄膜介面應力隨著製程時基板溫度的增加經退
    火後釋放完畢。此研究結果可以作為業界連續式濺鍍機台廠商決定製程參數的重要指標。
    For evaluating the possibility to improve the electrical and optical properties on aluminum
    doped zinc oxide (AZO) films with annealing, a series of low pressure annealing on AZO films
    prepared by in line direct circuit sputtering was made.
    Vacuum annealing was treated with 300℃, 400℃and 500℃ temperature. The results indicate
    vacuum annealing can improve the electrical resistivity from the order of 10-3 to 10-4 ohm-cm for
    AZO films produced with substrate no extra heating. The average optical transmittance between
    400 and 1100 nm wavelength region can be more than 80% for all AZO films prepared with
    different substrate heating temperatures and process gas after vacuum annealing. The X-ray
    diffraction results show interesting behavior. There is apparent (002) preferential crystal direction
    appeared for all AZO films with and without annealing. Instead of increase, the (002) X-ray
    diffraction peak intensity decreases, and peak shape becomes asymmetry for 150℃ substrate
    heating temperature after annealing. The (002) X-ray diffraction peak intensity increases and peak
    shape becomes symmetry for 200℃ substrate heating temperature after annealing. These
    phenomena are attributed to that annealing induces stress relaxation inside AZO films and interface
    between films and substrate, but the interface stress is transferred to films not completely relaxed
    for 150℃ substrate heating temperature after annealing. For higher substrate temperature like
    200℃, interface stress has been relaxed to some extent during film deposition. The film stress
    relaxes almost completely after annealing.
    This work contributes the possible choice to use low pressure annealing to improve electrical
    and optical properties of AZO films prepared by industry producing method : in line sputtering.
    Relation: 98 年度教育部推動技專校院與產業園區產學合作實施計畫成果報告
    Appears in Collections:[電機工程系所] 研究計畫

    Files in This Item:

    File Description SizeFormat
    計畫成果報告_98張慎周.pdf650KbAdobe PDF560View/Open


    All items in KSUIR are protected by copyright, with all rights reserved.


    本網站之所有圖文內容授權為崑山科技大學圖書資訊館所有,請勿任意轉載或擷取使用。
    ©Kun Shan University Library and Information Center
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback