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    Please use this identifier to cite or link to this item: http://ir.lib.ksu.edu.tw/handle/987654321/9473

    Title: Anisotropic stress effect on aluminum doped zinc oxide films produced from in-line sputtering
    Authors: 張慎周
    Shang-Chou Chang
    Shang-Chao Hung
    Bo-You Chen
    Tien-Chai Lin
    Contributor: 電機工程系
    Keywords: 應力
    in-line sputtering
    aluminum doped zinc oxide
    Date: 2009-12-20
    Issue Date: 2010-03-22 10:32:54 (UTC+8)
    Abstract: 在薄膜太陽能電池工業中,需要大面積、量產的透明導電膜。本篇探討豈有符合上述製作條件:利用直線式連續潑鍍機,不同基板溫度下製作氧化鋒慘鋁薄膜。實驗結果發現當基板溫度高於50℃時,量測到薄膜電性質中的載于濃度或是移動率均有明星質的對時間不穩定性。甚至,X光繞射薄膜量測結果顯示當基板溫度高於50℃時,薄膜優選方向(002) 繞射峰的高度隨著基板溫度越高而降低,與一般隨著基板溫度越高而升高不同。這兩項有趣的結果推測與直線式連續苦奮鍍機鍍製薄膜時產生非等向性應力有關。In this study, a[uminum doped zinc oxide (AZO) films were prepared by in-line DC sputtering with different substrate temperatures in order to produce large area and high throughput transparent conductive oxide films applied in thin film solar cells. It was found that apparent time instability of carrier concentration and mobility for the AZO films prepared with substrate temperature higher than 50℃. Moreover, not only the measured X-ray diffraction intensity with respect to ZnO preferential (002) plane decreases but also for substrate temperature higher than 50℃. Both cases are believed to relate with anisotropic stress for the prepared AZO films produced during in-line sputtering process.
    Relation: 真空科技 22卷 第3 期(27-31)
    Appears in Collections:[Graduate School and Department of Electrical Engineering] Periodical Articles

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