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    Please use this identifier to cite or link to this item: http://ir.lib.ksu.edu.tw/handle/987654321/9419


    Title: High-Temperature Stability of Lasing Wavelength
    Authors: 蘇炎坤
    Cheng-Tien Wan
    Yan-Kuin Su
    Ricky W. Chuang
    Hsin-Chieh Yu
    Chun-Yuan Huang
    Yi-Shin Wang
    Wei-Cheng Chen
    Wei-Heng Lin
    Manfred H. Pilkuhn
    Contributor: 電機工程系
    Keywords: GaAsSb
    lasers
    lasing wavelength stability against temperature shift
    MOVPE
    Date: 2010-03-15
    Issue Date: 2010-03-15 16:09:32 (UTC+8)
    Abstract: In this letter, we report the high-temperature stability
    of a lasing wavelength in GaAsSb/GaAs quantum-well (QW)
    lasers grown by metal–organic vapor phase epitaxy. To the best
    of our knowledge, this is the first successful use of triethylgallium
    (TEGa) as the precursor to grow GaAsSb/GaAs QW at low
    temperature (525 ◦C). The lasing wavelength ranges from 1117
    to 1144 nm and varies with temperature (dλ/dT ) from 0.24 to
    0.287 nm/K. These values are lower than those of other results
    reported previously. The QW grown at high temperature (600 ◦C)
    using trimethylgallium (TMGa) is also examined. The lasing
    wavelength is 1125.6 nm at room temperature, and dλ/dT is
    0.36 nm/K; the latter value is higher than those grown at lower
    temperature.
    Relation: IEEE ELECTRON DEVICE LETTERS, VOL. 30, NO. 11, NOVEMBER 2009
    Appears in Collections:[電機工程系所] 期刊論文

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