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    Please use this identifier to cite or link to this item: http://ir.lib.ksu.edu.tw/handle/987654321/9415


    Title: PdSi based ohmic contact on n-InP
    Authors: 黃文昌
    Wen Chang Huang;Chia Tsung Horng;Shr Shin Tsai
    Contributor: 電子工程學系
    Keywords: Ohmic contact
    Specific contact resistance
    Pd3In
    Pd3Si
    Date: 2010-03-15
    Issue Date: 2010-03-15 14:54:14 (UTC+8)
    Abstract: The electrical and microstructural properties of the PdSi based ohmic contacts on n-InP are discussed in
    the research. A low specific contact resistance of 2.25  106 V cm2 is obtained on Au/Si/Pd/n-InP
    contact after rapid thermal annealing (RTA) at 450 8C for 30 s. The low contact resistance can be
    maintained at the order of 106 Vcm2 even up to 500 8C annealing. From the Auger analysis, it is found
    that both the outdiffusion of In and the indiffusion of Si into the InP surface occurred at the ohmic contact
    sample. The formation of the Pd3Si compound lowered the barrier of the contact. The reactions between
    Pd and InP of the contact, forming In vacancies, and leading the doping of Si to the InP contact interface.
    Relation: Applied Surface Science 255 (2009) 8464–8469
    Appears in Collections:[電子工程系所] 期刊論文

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