The electrical and microstructural properties of the PdSi based ohmic contacts on n-InP are discussed in
the research. A low specific contact resistance of 2.25 106 V cm2 is obtained on Au/Si/Pd/n-InP
contact after rapid thermal annealing (RTA) at 450 8C for 30 s. The low contact resistance can be
maintained at the order of 106 Vcm2 even up to 500 8C annealing. From the Auger analysis, it is found
that both the outdiffusion of In and the indiffusion of Si into the InP surface occurred at the ohmic contact
sample. The formation of the Pd3Si compound lowered the barrier of the contact. The reactions between
Pd and InP of the contact, forming In vacancies, and leading the doping of Si to the InP contact interface.