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    Please use this identifier to cite or link to this item: http://ir.lib.ksu.edu.tw/handle/987654321/9413

    Title: The Electrical Characteristics of Al/organic/p-Si contacts
    Authors: 黃文昌
    Wen-Chang Huang
    Chien-Chou Chen
    Chia-Tsung Horng
    Shui-Hsiang Su
    Contributor: 電子工程學系
    Keywords: Schottky diode
    barrier height
    organic-inorganic semiconductor
    Date: 2010-03-15
    Issue Date: 2010-03-15 14:45:58 (UTC+8)
    Abstract: The I-V characteristics of the Al/Alq/p-Si
    contact shows rectifying behavior with a potential
    barrier formed at the contact interface. The barrier
    height and ideality factor values of 0.77eV and 1.53
    were measured at the forward bias of the diode. The
    temperature effect on the I-V measurement was also
    performed to reveal the junction characteristics. The
    ideality factor of the Al/Alq/p-Si contact decreases with
    increasing temperature. And the barrier height increases
    with increasing temperature. The barrier height obtained
    from the C-V measurement is 1.03eV which is higher
    than that from I-V measurement. The barrier height of
    the Al/Alq/p-Si diode at room temperature is larger
    that(~0.58eV) of conventional Al/p-Si diode. It reveals
    the Alq organic film control the carrier transport of the
    diode at the contact interface.
    Appears in Collections:[電子工程系所] 會議論文

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