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    Please use this identifier to cite or link to this item: http://ir.lib.ksu.edu.tw/handle/987654321/9277


    Title: Design and characterization of the negative differential resistance circuits using the CMOS and BiCMOS process
    Authors: Kwang-Jow Gan
    Cher-Shiung Tsai
    Dong-Shong Liang
    蔡澈雄
    Contributor: 圖書資訊館
    Keywords: Negative-differential-resistance
    Monostable–bistable transition logic element
    CMOS
    BiCMOS
    Date: 2010-01-15
    Issue Date: 2010-03-11 10:54:33 (UTC+8)
    Abstract: We investigate four novel negative-differentialresistance
    (NDR) circuits using the combination of the
    standard Si-based n-channel metal-oxide-semiconductor
    field-effect-transistor (NMOS) and SiGe-based heterojunction
    bipolar transistor (HBT). By suitably designing
    the parameters, we can obtain the K- or N-type current–
    voltage (I–V) curve. Especially, the peak current of the
    combined I–V curve could be easy adjusted by the external
    voltage. In application, we utilize the NDR circuit to design
    an inverter circuit based on the monostable–bistable transition
    logic element. The fabrication of these NDR circuits
    and applications could be completely implemented by the
    simple and standard Si-based CMOS or SiGe-based BiCMOS
    process without using the complex and expensive
    process such as metalorganic chemical vapor deposition
    (MOCVD) or molecular beam epitaxy (MBE).
    Relation: Analog Integr Circ Sig Process
    Appears in Collections:[電子工程系所] 期刊論文

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