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    Please use this identifier to cite or link to this item: http://ir.lib.ksu.edu.tw/handle/987654321/9101


    Title: 快速熱處理對濺鍍CIS薄膜太陽電池吸收層影響之研究
    其他題名: The study on the influences of rapid heat treatment to absorber performance of a CIS film solar cell
    Authors: 黃姿蒨
    Tzu-Chian Wong
    指導教授: 黃景良
    Keywords: 二硒化銅銦
    CuInSe2
    熱處理
    薄膜特性
    太陽能電池
    吸收層
    RTP
    Solar cell
    absorber layer
    Date: 2009-07-08
    Issue Date: 2010-03-06 17:53:47 (UTC+8)
    Abstract: 本論文主要是研究快速熱處理對濺鍍CIS薄膜太陽電池吸收層性能影響,該CIS薄膜太陽電池採用鈉鈣玻璃為薄膜基材,利用真空濺鍍 (Sputter)技術在鈉鈣玻璃基材鍍製薄膜太陽能電池的吸收層CuInSe2薄膜,利用0.25 kw的功率鍍製出原子比例及緻密性較佳的CuInSe2薄膜,為了製作出表面平滑、顆粒均勻和具有優良的光電性能的CuInSe2薄膜,故利用一種快速熱處理(Rapid Thermal Processing,RTP)技術來對薄膜進行快速熱處理後,使CuInSe2薄膜得到有如下幾點改良:(1)CIS薄膜的有更佳的晶體結構(2)CIS薄膜的表面型態更平滑和顆粒更均勻(3)CIS薄膜有更好的光電特性。
    利用改變溫度(150℃、250℃、350℃、450℃)和時間(40min、50min)的8種組合去做討論,結果表明在較低熱處理溫度150℃時CIS(220)、CIS(312)面的擇優取面沒有表現出來,但隨著溫度升高結晶性能越好,但在450℃時結晶性能降低,轉晶的最高點溫度應在350℃∼450℃之間,以間隔25℃做為檢查點(375℃、400℃、425℃)及時間變化(40min、50min)共6組來觀察結晶變化,結果得知在溫度375℃和40分鐘熱處理後的CIS薄膜較接近理想的原子比且結晶性能、表面平滑、顆粒均勻、緻密性較好且薄膜吸收性強,薄膜型態也從n-type轉變成為p-type;還得知另一結論當熱處理溫度較低時反應時間拉長有助於結晶;當熱處理溫度較高(350℃以上)時,為了補償Se原子量的減少反應時間應縮短。
    The main purpose of this thesis is to study the influences of rapid heat treatment to absorber performance of a CIS film solar cell. The soda-lime glass is used as substrate of thin film solar cell. The CuInSe2 absorber is coated on the substrate by RF vacuum sputtering technology. The better quality with compact and smooth lattice of CuInSe2 absorber with good atomic ratio can be obtained by using small power sputtering method. In order to gain the more uniform atomic structure with smoother surface and better PV performance CuInSe2 absorber, a RTP (Rapid Thermal Processing) is adopted in this thesis. The main gains after using RTP heat treatment are: (1) compact and uniform lattice structure(2)smoother CI|S thin film surface (3) better PV performances.
    It is found that the optimum combination of treatment temperature 375℃ and duration 40 minutes can gain the better CIS(220)and CIS(312)lattice faces; from this, compact and uniform lattice structure, smoother CIS thin film surface and better PV performances is then obtained.
    Appears in Collections:[機械工程系所] 博碩士論文

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