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    Please use this identifier to cite or link to this item: http://ir.lib.ksu.edu.tw/handle/987654321/8626


    Title: 600V 橫向式超接面閘流體過壓保護元件的設計與研究
    The Design of 600V Lateral Super-Junction Thyristor Surge Protective Device
    Authors: 周耕宇(Keng-Yu Chou)
    洪崇祐(Chung-Yu Hung)
    蘇如意(Ru-Yi Su)
    龔正(Jeng Gong)
    Keywords: 橫向式閘流體
    崩潰電壓
    閘流體過壓保護元件
    超接面
    lateral thyristor
    breakdown voltage
    thyristor surge protetive device (TSPD)
    super-junction
    Date: 2008-09-05
    Issue Date: 2010-02-23 09:49:12 (UTC+8)
    Abstract: 在現代深次微米尺寸的積體電路產品中,電晶體元件對突
    波和靜電放電變得非常敏感,為了保護產品不至於毀損,需要
    過壓保護元件來保護。本文將傳統垂直式的閘流體改為橫向式
    結構,並與超接面結構做結合,使用三維模擬軟體進行元件的
    電性分析,研究顯示超接面能使電場分佈較為平坦,可有效提
    升元件的崩潰電壓,實際製作的元件耐壓可達600V 以上。模
    擬結果顯示如果後續製作能加入深埋藏層的結構,崩潰電壓甚
    至能超過1000V 以上。
    In the modern deep sub-micron integrated circuit products,
    transistors are sensitive to surge and electrostatic discharge. We
    need high voltage surge protective device to prevent products
    from failure. In this work we convert the conventional
    vertical-structured thyristor to the lateral-structured one, and
    combine it with super-junction structure. The electrical properties
    of the device were analyzed with three-dimensional simulation
    software. It shows that there is a smoother electric field
    distribution with super-junction and it can effectively increase the
    breakdown voltage. Breakdown voltages of higher than 600V
    were measured on fabricated devices. Simulation result shows
    that if a deep buried layer can be realized in similar structure,
    breakdown voltage of higher than 1000V is obtainable.
    Appears in Collections:[電機工程系所 ] 2008第七屆台灣電力電子研討會暨展覽會

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