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    Please use this identifier to cite or link to this item: http://ir.lib.ksu.edu.tw/handle/987654321/8368

    Title: (1-x)CaNb2O6-xTiO2與(Zn0.67Ni0.33)0.5Ti0.5NbO4微波介電陶瓷製程及其特性之研究
    其他題名: Process and Properties of (1-x)CaNb2O6-xTiO2 and (Zn0.67Ni0.33)0.5Ti0.5NbO4 Microwave Dielectric Ceramics
    Authors: 王盈智
    Ying-Jhih Wang
    Contributors: 劉依政
    Keywords: CaNb2O6
    Microwave Dielectric
    Date: 2009-07-31
    Issue Date: 2010-02-04 11:14:18 (UTC+8)
    Abstract: 本論文以反應燒結法製備(1-x)CaNb2O6-xTiO2(CNT)(x=0.1、0.3、0.5)與(Zn0.67Ni0.33)0.5Ti0.5NbO4(ZNTN)微波介電陶瓷。CaNb2O6(CN)陶瓷添加少量的TiO2可以有效的降低CN陶瓷的燒結溫度,且可以使其更緻密。1270oC燒結6小時之CNT在x=0.1可獲得微波介電特性:εr=20.7、Q×f=42,900GHz(6.6GHz)。1270oC燒結6小時之CNT在x=0.3可獲得微波介電特性:εr=20.6、Q×f=32,900GHz(6.4GHz)。1250oC燒結4小時之CNT在 x=0.5可獲得微波介電特性:εr=17.2、Q×f= 22,100GHz (6.9GHz)。ZNTN陶瓷在1250oC以下燒結,其主要生成相為Zn0.5Ti0.5NbO4相與二次相NiNb2O6,並且有少量的Ni0.5Ti0.5NbO4相形成,當燒結溫度為1300oC時其主要生成相轉變成Ni0.5Ti0.5NbO4為主。從SEM中發現在1300oC時有晶粒異常成長的狀態。在1150oC燒結2小時可得較佳微波介電特性:εr=43.1、Q×f=18,800GHz (6.2GHz)和τf =+12.72 ppm/oC。
    Properties of (1-x)CaNb2O6-xTiO2 (CNT) (x=0.1, 0.3, and 0.5) and (Zn0.67Ni0.33)0.5Ti0.5NbO4 (ZNTN) microwave dielectric ceramics produced using a reaction-sintering process were investigated. With TiO2 addition, the sintering temperature could be effectively lowered and density increased in CNT ceramics. Microwave dielectric properties: εr=20.7, Q×f = 42,900GHz (6.6GHz) were obtained in CNT with x=0.1 after sintering at 1270oC for 6 h. εr=20.6, Q×f=32,900GHz (6.4GHz) were obtained in CNT with x=0.3 after sintering at 1270oC for 6 h. Microwave dielectric properties: εr=17.2, Q×f = 22,100GHz (6.9GHz) were obtained in CNT with x=0.5 after sintering 1250oC for 4 h. The main phase Zn0.5Ti0.5NbO4 and second phase NiNb2O6 accompanied with small amount of Ni0.5Ti0.5NbO4 phase were observed in ZNTN ceramics sintered below 1250oC. Ni0.5Ti0.5NbO4 became the main phase in ZNTN ceramics sintered above 1300oC. Microwave dielectric properties: εr=43.1, Q×f=18,800GHz (6.2GHz) and τf =+12.72 ppm/oC were obtained in ZNTN after sintering at 1150oC for 2 h.
    Appears in Collections:[電子工程系所] 博碩士論文

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