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    Please use this identifier to cite or link to this item: http://ir.lib.ksu.edu.tw/handle/987654321/8329


    Title: NUMERICAL STUDY OF THE DLC FILM FLOW FIELD ON THE ECR-PECVD REACTION CHAMBER
    Authors: C. H. Tai
    F. L. Lih
    J.C. Leong
    W. C. Feng
    Y. S. Li
    Keywords: DLC
    ECR-PECVD
    CFD
    deposition rate
    uniformity
    Date: 2008-11-08
    Issue Date: 2010-01-28 10:31:36 (UTC+8)
    Abstract: This paper mainly investigates the optimum parameters for the fabrication of uniform Diamond-like Carbon (DLC) film on the electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR-PECVD) by analyzing the effect of the reacting gas velocity on the film properties. In order to ensure that the film capability both in protecting the lens module of infrared detection system but not interfering the system normal operation, this work makes use of computational fluid dynamics (CFD) approach to evaluate the uniformity, the deposition rate, and the conversion efficiency of the film at the substrate.
    In order to provide further understanding of adjusting the parameters involved in the fabrication process, this work has constructed the modeling of surface chemical reactions, flow and temperature fields, as well as heat and mass transfer phenomena. Simulation has shown that, under the combined influence of nature convection effect and mass transfer effect on the reactor, the flow field within the reactor recirculating flow and therefore affects the distribution of material deposition. In other words, the results of attach the endplate at the top of the substrate, the deposition rate of the substrate will available enhanced. However, the surface uniformity of the substrate is obviously less. Moreover, if the length of endplate is between 0.045m~0.085m, the uniformity of surface can be better, but when the length of endplate is too long, it will create uniformity of poor addition. In addition, both of opening gap and increase the diameter of the hole on the baffle, although the film can effectively improve the uniformity of surface, but not conducive to deposition rate.
    Appears in Collections:[機械工程系所] SME 2008第六屆全國精密製造研討會-國際製造工程學會中華民國分會

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