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    Please use this identifier to cite or link to this item: http://ir.lib.ksu.edu.tw/handle/987654321/6793


    Title: 研製以電晶體構建的S型與N型負微分電阻元件,應用電路,與其積體電路化之探討
    Authors: 甘廣宙
    Keywords: 負微分電阻元件
    多峰值負微分電阻特性
    應用電路
    negative differential resistance devices
    multiple-peak NDR devices
    applications
    Date: 2002-07-31
    Issue Date: 2009-12-31 15:03:07 (UTC+8)
    Abstract: 本計畫的目標在於利用電晶體的組合來構建多種型式的S型與N型的負微分電阻元件,研究其工作原理,分析相關參數的影響,探討多峰值負微分電阻特性的控制方法,並利用負微分電阻元件其特殊的電流-電壓特性,開發並製作相關應用電路。我們此計畫所研究與使用的負微分電阻元件,其由電晶體的組合來構建,具有易控制、易調變、與可在室溫下操作的優點,並可經由適當的發展與設計,可將此元件設計在相關應用電路上。
    This project is aimed at studying numerous type-S and type-N negative differential resistance (NDR) devices based on the combination of some transistors. We will investigate their theory, the effect of parameters, and the control of multiple-peak NDR devices. Some applications based on the special current-voltage (I-V) characteristics will be designed and fabricated. The NDR devices studied in this project were consisted of transistors. They are easy controlled, adjusted, and operated at room temperature. During suitable development and design, these devises could be applied to some applications.
    Appears in Collections:[電子工程系所] 研究計畫

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