本研究針對透明氧化鋅薄膜之研究及應用於p型氮化鎵的歐姆接觸。主要研究分兩大部分：一為高品質的氧化鋅薄膜之研製，二為歐姆接觸的應用。在氧化鋅薄膜之製作，乃是利用熱蒸鍍法蒸鍍奈米氧化鋅粉末，並摻入鋁以增加其導電度。設計之薄膜結構分別如下：AZO1：ZnO/Al、AZO2：ZnO/Al/ZnO/Al和AZO3：ZnO/Al/ZnO/Al/ZnO/Al/ZnO/Al三種結構。經退火處理後，在AZO3的薄膜經由X光繞射分析(XRD)可清楚看到在2θ=34.46°有ZnO(0 0 2)與2θ=34.46°有ZnO(1 0 1)兩個結晶相存在。而這三種薄膜的透光率在尚未退火時透光率都不好，但經過熱退火處理後均可達到80%以上，尤其AZO3的透光率可達到90％。在歐姆結構的設計，乃是以疊層結構AZO/Pt/p-GaN以探討之，此結構經過快速熱退火處理後，雖然具有良好的穩定性及透光率，但歐姆接觸電阻值仍然略高。
The study of ZnO thin film and its application on ohmic were discussed in the research. There are two main sections in the study. Firstly, high quality ZnO thin film was prepared and secondly, it was applied to be the ohmic contact electrode of the GaN semiconductor. Nano-power of ZnO was used and metal Al was added to improve the conductivity of the thin film. Three structures were design, they are: AZO1: ZnO/Al, AZO2: ZnO/Al/ZnO/Al and AZO3: ZnO/Al/ZnO/Al/ZnO/Al/ZnO/Al. In these schemes, the AZO3 showed better quality than others. The phases of ZnO(002) and ZnO(101) were seen at 2θ=34.46°and 2θ=34.46°, respectively after thermal annealing of the AZO3. All the schemes showed transparency of about 80%, and the AZO3 could reach to 90% of transparency. For the ohmic contact, contact structure of AZO/Pt/p-GaN was designed. The contacts were treated with rapid thermal annealing from 400°C to 900°C for 30 sec after deposition. The contact retained a good surface morphology and transparency while it showed poor contact resistance.