本計畫的目標在於利用金氧半場效電晶體(MOSFET)與雙載子電晶體(BJT)的組合來構建多種型式且易調變的N 型負微分電阻元件(negative differential resistance device, NDR device)，在此計畫中我們稱此類負微分電阻元件為【MOS- NDR】與【MOS-BJT-NDR】元件，其電流-電壓特性曲線與傳統負微分電阻元件，例如共振穿透二極體(resonant tunneling diode,RTD)元件相比較，具有較佳電流-電壓特性曲線的調變性，且最大的優點為可與目前晶片設計製作中心(CIC)所提供的與CMOS 或BiCMOS 製程相配合。不像共振穿透二極體元件，其結構是由三-五族化合物半導體所構成，成長此類元件與電路，需要昂貴的MOCVD 或MBE 儀器配合，成本較高，且不易與其他元件或電路作系統整合。我們所研發的【MOS-BJT-NDR】負微分電阻元件，則可與相關元件與應用電路相整合於同一矽(Silicon)晶片上，達到積體電路化(IC)與系統晶片化(SoC)的目標。第二年計畫主題為利用新型【R-HBT-NDR 】、【MOS-NDR 】、【MOS-HBT-NDR】元件為基礎，設計各種應用積體電路，有多穩態記憶器電路設計、壓控振盪器電路設計、倍頻器電路設計、除頻器電路設計、多工器電路設計與細胞類神經網路。
The purpose of this plan is to construct various and adjustable N-type negative differential resistance (NDR) device utilizing the combination of MOSFET and BJT devices. In this project, we regard this type of NDR device named as MOS-BJT-NDR device. Comparing to the traditional NDR device like RTD, the current-voltage curve of MOS- BJT-NDR device has a wide range of adjustable characteristic. The biggest merit of MOS-BJT-NDR lies in the fact that it can be implemented by the CMOS and BiCMOS processes provided by the CIC. Unlike RTD, which consists of III-V semiconductor compounds and the cost is high for implementation by the MOCVD or MBE system. It means that the RTD is not easy to integrate with other Si-based devices and circuits. However we propose the MOS-BJT-NDR device is easy to integrate with other devices and circuits on the same silicon chip to achieve the goal of integrated circuit (IC) and system-on-a-chip (SoC). The aim of the second year of our plan is to design the applications such as multi-valued memory circuit, voltage controlled oscillator, frequency multiplier, frequency divider, multiplexer, and cellular neural network based on the R-HBT-NDR, MOS-NDR, and MOS-HBT-NDR devices.