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    Please use this identifier to cite or link to this item: http://ir.lib.ksu.edu.tw/handle/987654321/5890


    Title: Preparation of visible-light-active Ag and In-doped ZnS thin film photoelectrodes by reactive magnetron co-sputtering
    Authors: Chao-Ming Huang (黃昭銘)
    Kong-Wei Cheng
    Yi-Ruei Jhan
    Tsair-Wang Chung
    Keywords: Co-sputtering
    Visible-light-active photoelectrodes
    Photocurrent density
    Donor density
    Date: 2007-03-08
    Issue Date: 2009-11-20 12:18:35 (UTC+8)
    Abstract: Ag and In-doped ZnS thin films were prepared by direct current and radio frequency reactive co-sputtering of a zinc target and an indium target
    covered by Ag wires in gas mixtures of argon and hydrogen sulfide. The influences of the various deposition parameters on the structural, optical
    and electrical performances of thin films as visible-light-active photoelectrodes have been investigated. The X-ray diffraction data revealed that the
    polycrystalline (Ag, In, Zn)S thin films contain mixed structures of AgIn5S8 and ZnS. The images from an atomic force microscopy showed that
    the surface roughness was significantly increased with incremental increases of plasma power, resulting in increases of the refractive index and the
    reduction in photocurrent. The film deposited in the optimal deposition parameters, DC and RF powers at 50 W using a hydrogen sulfide ratio of
    0.40 with a substrate temperature of 300 °C, exhibits the smallest refractive index, highest donor density, and the highest photocurrent density
    under illumination with a solar simulator (AM 1.5) at +1.00 V vs. Ag/AgCl. The band-gap energies of as-prepared films are found to be in the
    range of 2.28 to 2.39 eV and flat-band potentials determined by application of the Mott–Schottky equation vary from −0.55 to −0.68 V versus
    normal hydrogen electrode.
    Relation: Thin Solid Films 515 (2007) 7935–7944
    Appears in Collections:[環境工程系所] 期刊論文

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