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    Please use this identifier to cite or link to this item: http://ir.lib.ksu.edu.tw/handle/987654321/5889

    Title: Physical properties of AgIn5S8 polycrystalline films fabricated by solution growth technique
    Authors: Kong-Wei Cheng
    Chao-Ming Huang (黃昭銘)
    Guan-Ting Pan
    Pei-Chun Chen
    Tai-Chou Lee
    Thomas C.K. Yang
    Keywords: Semiconductors
    Chemical synthesis
    Electronic characterization
    Electrical properties
    Date: 2007-08
    Issue Date: 2009-11-20 12:15:55 (UTC+8)
    Abstract: Polycrystalline ternary AgIn5S8 films were deposited on indium–tin-oxide coated glass substrates by using chemical bath deposition. New
    procedures for the growth of films are presented. The solutions containing silver nitrate, indium nitrate, triethanolamine, ammonium nitrate,
    and thioacetamide under acidic conditions were used for the deposition of AgIn5S8 polycrystalline films. The influences of various deposition
    parameters on structural, optical, and electrical properties of films have been investigated. The X-ray diffraction patterns show cubic AgIn5S8
    is the major crystalline phase. With different substrates, the different crystalline phases were observed. The band gaps and carrier densities of
    these samples determined from transmittance spectra, electrochemical and Hall measurements are in the range of 1.73–1.85 eV and 4.35×1014 to
    6.53×1014 cm−3, respectively. The flat band potentials of these samples are located between−0.31 and−0.41V versus normal hydrogen electrode
    by using the Mott–Schottky measurements. All samples indicated n-type conductivities by electrochemical and Hall measurements. The maximum
    photocurrent density of samples prepared in this study was found to be 4.5mAcm−2 under the illumination using a 300 Xe lamp system with the
    light intensity kept at 100mWcm−2.
    Relation: Materials Chemistry and Physics
    Appears in Collections:[環境工程系所] 期刊論文

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