Kun Shan University Institutional Repository:Item 987654321/5793
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    题名: Preparation and photoelectrochemical applications of chemically synthesized Sb-doped p-AgIn5S8 film electrodes
    作者: Kong-Wei Cheng
    Chao-Ming Huang(黃昭銘)
    Guan-Ting Pan
    Wen-Sheng Chang
    Tai-Chou Lee
    Thomas C.K. Yang
    关键词: Chemical conversion
    X-ray diffraction
    日期: 2008
    上传时间: 2009-11-18 09:25:41 (UTC+8)
    摘要: Chemically synthesized Sb-doped p-type AgIn5S8 films with several parameters, such as ratios of Sb/Ag
    in the reaction solution and multiple depositions of films, were grown on indium–tin-oxide coated glass
    substrates in this study. The X-ray diffraction patterns of samples show the cubic AgIn5S8 phase in these
    films. The thicknesses, energy band gaps, and carrier densities of these samples were in the ranges of
    537–776 nm, 1.71–1.73 eV, and 6.571014–8.821014cm3, respectively. The maximum photocurrent
    density of samples with an external potential of 3.5 V vs. a Pt electrode was found to be 5.02mA/cm2
    under illumination using a 300W Xe lamp system.
    显示于类别:[環境工程系所] 期刊論文


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