Chemically synthesized Sb-doped p-type AgIn5S8 films with several parameters, such as ratios of Sb/Ag
in the reaction solution and multiple depositions of films, were grown on indium–tin-oxide coated glass
substrates in this study. The X-ray diffraction patterns of samples show the cubic AgIn5S8 phase in these
films. The thicknesses, energy band gaps, and carrier densities of these samples were in the ranges of
537–776 nm, 1.71–1.73 eV, and 6.571014–8.821014cm3, respectively. The maximum photocurrent
density of samples with an external potential of 3.5 V vs. a Pt electrode was found to be 5.02mA/cm2
under illumination using a 300W Xe lamp system.