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    Please use this identifier to cite or link to this item: http://ir.lib.ksu.edu.tw/handle/987654321/5793

    Title: Preparation and photoelectrochemical applications of chemically synthesized Sb-doped p-AgIn5S8 film electrodes
    Authors: Kong-Wei Cheng
    Chao-Ming Huang(黃昭銘)
    Guan-Ting Pan
    Wen-Sheng Chang
    Tai-Chou Lee
    Thomas C.K. Yang
    Keywords: Chemical conversion
    X-ray diffraction
    Date: 2008
    Issue Date: 2009-11-18 09:25:41 (UTC+8)
    Abstract: Chemically synthesized Sb-doped p-type AgIn5S8 films with several parameters, such as ratios of Sb/Ag
    in the reaction solution and multiple depositions of films, were grown on indium–tin-oxide coated glass
    substrates in this study. The X-ray diffraction patterns of samples show the cubic AgIn5S8 phase in these
    films. The thicknesses, energy band gaps, and carrier densities of these samples were in the ranges of
    537–776 nm, 1.71–1.73 eV, and 6.571014–8.821014cm3, respectively. The maximum photocurrent
    density of samples with an external potential of 3.5 V vs. a Pt electrode was found to be 5.02mA/cm2
    under illumination using a 300W Xe lamp system.
    Appears in Collections:[環境工程系所] 期刊論文

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