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    Please use this identifier to cite or link to this item: http://ir.lib.ksu.edu.tw/handle/987654321/5792


    Title: The photoelectrochemical performances of Sb-doped AgIn5S8 film electrodes prepared by chemical bath deposition
    Authors: Kong-Wei Cheng
    Chao-Ming Huang(黃昭銘)
    Guan-Ting Pan
    Jau-Chyn Huang
    Tai-Chou Lee
    Thomas C.K. Yan
    Keywords: Photoelectrochemical reaction
    Optical property
    Crystalline
    Electrode
    Date: 2008
    Issue Date: 2009-11-18 09:23:22 (UTC+8)
    Abstract: The Sb-doped AgIn5S8 films were grown on indium–tin–oxide substrates using chemical bath deposition.
    The X-ray diffraction patterns of samples show the polycrystalline AgIn5S8 phase in these films.
    With the molar ratio of Sb/Ag in the solution higher than 0.2, the conduction type of samples turns
    into p-type. The thickness, energy band gaps, and carrier densities of these samples are in the range of
    692–1119 nm, 1.71–1.73 eV and 5.75×1014 to 9.85×1014 cm−3, respectively. The maximum photocurrent
    density of samples with external potential kept at 1.0V vs. an Ag/AgCl reference electrode was found to
    be −2.73mA/cm2 under illumination using a 300 Xe lamp system.
    Appears in Collections:[環境工程系所] 期刊論文

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