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    Please use this identifier to cite or link to this item: http://ir.lib.ksu.edu.tw/handle/987654321/5790


    Title: Effect of Ni on the growth and photoelectrochemical properties of ZnS thin films
    Authors: Chao-Ming Huang(黃昭銘)
    Lung-Chuan Chen
    Guan-Ting Pan
    Thomas C.K. Yang
    Wei-Sheng Chang
    Kong-Wei Chenge
    Keywords: Semiconductors
    Chemical synthesis
    Electrical properties
    Thin films
    Date: 2009
    Issue Date: 2009-11-18 09:18:51 (UTC+8)
    Abstract: Undoped and Ni-doped ZnS thin film photoelectrodes were prepared using the chemical bath deposition
    process. X-ray diffraction patterns of a hexagonal wurtzite structure with preferential orientation along
    the (0 0 8) plane appeared on undoped ZnS films. An increase in the molar ratios of Ni, x, in the starting
    solution resulted in a decrease in the intensity of the (0 0 8) plane. Images froma scanning electron microscope
    revealed a drastic change of the surface morphology of the Ni-doped ZnS film due to ion-by-ion
    deposition. The energy band gaps of Ni-doped ZnS thin films shifted to lower energy levels between 3.34
    and 3.01 eV. Moreover, increasing the Ni ratio led to a shift in the flat-band potential of the film towards
    a more positive value compared to that of ZnS. The Ni-doped ZnS films experienced a conversion from
    n-type to p-type when the molar ratio of Ni changed from 0.003 to 0.005. The photocurrent densities
    of Ni-doped ZnS film (x = 0.003) reached 3.74mAcm−2 at an external potential of 1.5V versus a Pt electrode
    and exhibited a threefold enhancement of photocurrent density compared to pure ZnS. A cathodic
    photocurrent of 0.82mAcm−2 at an external potential of −1.5V was obtained for a Ni concentration of
    x = 0.005.
    Appears in Collections:[環境工程系所] 期刊論文

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