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    Please use this identifier to cite or link to this item: http://ir.lib.ksu.edu.tw/handle/987654321/3761


    Title: Carbon nanotubes grown from nickel catalyst pretreated with H2/N2 plasma
    Authors: ChangShang-Chou (張慎周)
    LinTien-Chai
    HuangSheng-Han
    LiTo-Sing (李道聖)
    Keywords: Low temperature
    Carbon nanotube
    H2/N2 plasma
    Date: 2009-02-26
    Issue Date: 2009-08-15 19:31:08 (UTC+8)
    Abstract: To find the possibility of using a low-temperature process in growing carbon nanotubes (CNTs), nickelcatalyst converted from film into particles by microwave H2/N2 plasma and the following CNT growthare all kept at a low temperature of 250 1C. The flat panel display industry requests low-temperaturerather than the traditional high-temperature process for CNT growth. It was found that H2/N2proportion is very sensitive to nickel morphology and the subsequent CNT growth. Better nickel andCNTs morphology are obtained for the proportion H2/N2 ¼ 3/1 than those for the generally used purehydrogen environment. The process pressure selection during pretreatment can determine whetherCNTs are grown or not. The diameter of growing CNTs is proportional to nickel particle size. Fieldemission results support field amplification coefficient claim. The long tube length and high tubedensity of growing CNTs demonstrate low threshold electric field. This work shows the potential to useH2/N2 instead of pure hydrogen plasma in growing qualified CNTs applied in display industry.
    Relation: Microelectronics Journal 39 (2008) 1572– 1575
    Appears in Collections:[電機工程系所] 期刊論文

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