本研究首先是使用反應性磁控濺鍍法成長Zn3N2 薄膜，利用鋅靶(99.99%)及使用氮氣與氬氣當作製程氣體，改變不同基板溫度得到Zn3N2，再經石英管型爐退火處理，固定退火時間50 分鐘，不同退火溫度(300℃~500℃)氧化得到ZnO 薄膜。但此薄膜經退火後表面迅速脆化剝落，得知薄膜附著性及穩定型非常不好，經XRD 結構分析顯示，Zn3N2 在室溫下即可成長，其片電阻值為436 kΩ/□，將Zn3N2 重複量測電阻結果發現，其片電阻隨著時間增加而增加。為了改變Zn3N2 薄膜之附著性，故在成長Zn3N2 薄膜時，增加DC 直流偏壓，並利用加熱盤進行退火處理並利用IV 量測其電阻值，此好處是能隨時觀察薄膜表面變化，動態了解在不同退火溫度與時間對薄膜之影響，經霍爾電性量測分析，得到最佳電阻率為9.19Ω-cm、載子濃度為1.1x1018cm-3、載子遷移率為5.56cm2/vs 的P 型氧化鋅導電膜。In this case, Zn3N2 thin films were deposited using a RF magnetron sputtering system with zinc(99.99% purity) as a target material and Ar and N2 as reactive gases. The Zn3N2 films were grownwith various substrate temperature s, and then were annealed in a tube type q uartz furnace atconstant annealing time of 50 minutes. The films were o xidized to form ZnO at 300~500℃.Afterannealing, the films have been delaminated with substrates, this phenomenon indicates that thefilms have a bad adhesion and unstability. Growing at room temperature, the Zn 3N2 structure canbe identified by XRD. The sheet resistance of the Zn 3N2 film was 436 kΩ/□ at an initial test,but the value will increase with rising a storing time. In order to improve the property ofunstability, DC bias was applied to grow the Zn3N2 films. The annealing was also processed by ahot plate and the resistance wa s directly measured by I-V analyzer. The benefit of this method isable to directly observe the films surface change and dynamically to understand the relationshipbetween film properties and, annealing temperature and time. To detect the electric properti es byHall measurement, we obtain a P type film which show the best resistivity of 9.19 Ω-cm,carrierconcentration of 1.1×1018cm-3 and mobility of 5.56 cm2/vs.