English  |  正體中文  |  简体中文  |  Items with full text/Total items : 26136/26731 (98%)
Visitors : 10089793      Online Users : 235
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version

    Please use this identifier to cite or link to this item: http://ir.lib.ksu.edu.tw/handle/987654321/3554

    Title: 開發新型MOS-BJT-NDR 元件與應用積體電路之設計(2/3)
    “Development of New-Type MOS-BJT-NDR Devices and Applied Integrated Circuits Design (2/3)”
    Authors: 甘廣宙
    Date: 2006-05-25
    Issue Date: 2009-08-15 00:34:12 (UTC+8)
    Abstract: 本計畫的目標在於利用金氧半場效電晶體(MOSFET)與雙載子電晶體(BJT)的組合來構建多種型式且易調變的N 型負微分電阻元件(negative differential resistance device, NDRdevice),在此計畫中我們稱此類負微分電阻元件為【MOS- NDR】與【MOS-BJT-NDR】元件,其電流-電壓特性曲線與傳統負微分電阻元件,例如共振穿透二極體(resonant tunneling diode,RTD)元件相比較,具有較佳電流-電壓特性曲線的調變性,且最大的優點為可與目前晶片設計製作中心(CIC)所提供的與CMOS 或BiCMOS 製程相配合。不像共振穿透二極體元件,其結構是由三-五族化合物半導體所構成,成長此類元件與電路,需要昂貴的MOCVD 或MBE 儀器配合,成本較高,且不易與其他元件或電路作系統整合。我們所研發的【MOS-BJT-NDR】負微分電阻元件,則可與相關元件與應用電路相整合於同一矽(Silicon)晶片上,達到積體電路化(IC)與系統晶片化(SoC)的目標。第二年計畫主題為利用新型【R-HBT-NDR 】、【MOS-NDR 】、【MOS-HBT-NDR】元件為基礎,設計各種應用積體電路,有多穩態記憶器電路設計、壓控振盪器電路設計、倍頻器電路設計、除頻器電路設計、多工器電路設計與細胞類神經網路。The purpose of this plan is to constructvarious and adjustable N-type negative differentialresistance (NDR) device utilizing the combinationof MOSFET and BJT devices. In this project, weregard this type of NDR device named asMOS-BJT-NDR device. Comparing to thetraditional NDR device like RTD, thecurrent-voltage curve of MOS- BJT-NDR devicehas a wide range of adjustable characteristic. The biggest merit of MOS-BJT-NDR lies in the fact thatit can be implemented by the CMOS and BiCMOSprocesses provided by the CIC. Unlike RTD, whichconsists of III-V semiconductor compounds and thecost is high for implementation by the MOCVD orMBE system. It means that the RTD is not easy tointegrate with other Si-based devices and circuits.However we propose the MOS-BJT-NDR device iseasy to integrate with other devices and circuitson the same silicon chip to achieve the goal ofintegrated circuit (IC) and system-on-a-chip (SoC).The aim of the second year of our plan is todesign the applications such as multi-valuedmemory circuit, voltage controlled oscillator,frequency multiplier, frequency divider,multiplexer, and cellular neural network based onthe R-HBT-NDR, MOS-NDR, andMOS-HBT-NDR devices.
    Appears in Collections:[電子工程系所] 研究計畫

    Files in This Item:

    File Description SizeFormat
    942215E168001.pdf1315KbAdobe PDF504View/Open

    All items in KSUIR are protected by copyright, with all rights reserved.

    ©Kun Shan University Library and Information Center
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback