English  |  正體中文  |  简体中文  |  Items with full text/Total items : 25835/26429 (98%)
Visitors : 8185375      Online Users : 189
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version


    Please use this identifier to cite or link to this item: http://ir.lib.ksu.edu.tw/handle/987654321/3549


    Title: 金屬對硒化鎵之接觸研究
    Authors: 黃文昌
    陳毓民
    王智嘉
    洪家宗
    Keywords: 蕭特基二極體
    接觸
    硒化鎵
    Schottky diode
    contact
    GaSe
    Date: 2007-08-01
    Issue Date: 2009-08-15 00:32:33 (UTC+8)
    Abstract: 本計畫探討一新型蕭特基二極體:鋁/ p 型硒化鎵。此蕭特基二極體經過400°C 30 秒快速加熱退火後可得到能障高度0.96eV,理想因子1.24 並且在反向偏壓2V 時之漏電流密度為4.12×10-7 A/cm2。當此二極體經過快速加熱退火後,隨著退火溫度之增加使得金屬與半導體間之產生復合的效應隨之減少。且在400°C 30 秒快速加熱退火後藉由X 光散射儀可觀察到Al1.33Se2之晶相。由於新的結晶產生,從AFM 和SEM 的分析中觀察到二極體的表面顯出較不平整的現象。此二極體也利用變溫的電流電壓特性量測分析探討它的特性:隨著量測溫度的降低,能障高度隨之降低,但理想因子卻隨之提高。並切藉由理察遜作圖,可得到此二極體在高溫時之活化能為0.26eV,在低溫之活化能為0.07eV。A new Schottky diode, Al/p-GaSe was presented at this project. It shows an effective barrierheight of 0.96eV with an ideality factor of 1.24 last over five decades and a reverse leakage currentdensity of 4.12×10-7 A/cm2 at -2V after rapid thermal annealing at 400°C for 30 sec. Thegeneration-recombination effect of the Schottky diode was decreased as the annealing temperaturewas increased. The formation of Al1.33Se2 was observed by X-ray diffraction analysis after the diodewas annealed at 400 °C for 30 sec. Owing to the grains growth, the surface morphology of the400°C-annealed diode was rougher than that of the unannealed diode, which was observed both by theAFM and the SEM analysis. The diode characteristic was also discussed by currentvoltage-temperature (I-V-T) measurement. The forward I-V-T data reveals a decrease at the barrierheight, but an increase at the ideality factor with decreasing in measurement temperature. TheRichardson plot showed activation energy of 0.26eV at high temperature region, while showed alower energy of 0.07eV at low temperature region.
    Appears in Collections:[電子工程系所] 研究計畫

    Files in This Item:

    File Description SizeFormat
    952221E168012.pdf487KbAdobe PDF448View/Open


    All items in KSUIR are protected by copyright, with all rights reserved.


    本網站之所有圖文內容授權為崑山科技大學圖書資訊館所有,請勿任意轉載或擷取使用。
    ©Kun Shan University Library and Information Center
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback