Kun Shan University Institutional Repository:Item 987654321/3456
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    jsp.display-item.identifier=請使用永久網址來引用或連結此文件: http://ir.lib.ksu.edu.tw/handle/987654321/3456


    题名: 工業技術研究院分包學界研究計畫期末報告: 電漿法光觸媒薄膜成長技術與反應效能分析研究
    作者: 黃昭銘
    楊重光
    日期: 2006-11-24
    上传时间: 2009-08-14 23:50:48 (UTC+8)
    摘要: 本研究在氬氣與反應性氣體硫化氫的氣氛下,於DC端放置鋅靶,在RF端放置銦靶及銀線,製備DC/RF共濺鍍沈積Ag-In-Zn-S光觸媒薄膜。濺鍍過程中固定RF功率(50W)及基板溫度(300℃),改變DC功率及H2S/Ar流量比,利用PL-光譜儀、XRD及電性量測儀對薄膜進行光穿透率、表面結構及光電流分析,探討濺鍍參數對薄膜性質之影響。由光穿透率結果薄膜能隙值在2.28 ~ 2.39 eV;XRD之結果可以發現,隨著DC功率的提高,AgInZn7S9的peak並沒有太大的改變,當功率在60W時,ZnS (2,2,0)有明顯產生,Zn所濺射出的量有過多的趨勢。在DC功率為50W時,H2S/Ar氣體流量比為0.4所製備之光電極,以300W鹵素燈(光強度:100 mW /cm2)為光源,於室溫下Na2S(0.35M) + K2SO3(0.25M)水溶液中進行光電流量測,可以得到最大光電流(12.96 mA / cm2),該薄膜於波長420 nm時可以得到光量子效率約為3.7%。以上結果顯示本計畫所運用之反應性共濺鍍法可以製備出高品質、均勻性佳的可見光光觸媒薄膜。
    Ag and In-doped ZnS thin films were prepared by direct current and radio frequency reactive co-sputtering of a zinc target and an indium target covered by Ag wires in gas mixtures of argon and hydrogen sulfide. The influences of the various deposition parameters on the structural, optical and electrical performances of thin films as visible-light-active photoelectrodes have been investigated. The X-ray diffraction data revealed that the polycrystalline (Ag, In, Zn)S thin films contain mixed structures of AgIn5S8 and ZnS. The film deposited in the optimal deposition parameters, DC and RF powers at 50 W using a hydrogen sulfide ratio of 0.40 with a substrate temperature of 300℃, exhibits the smallest refractive index, highest donor density, and the highest photocurrent density under illumination with a solar simulator (AM 1.5) at +1.00 V vs. Ag/AgCl. The band-gap energies of as-prepared films are found to be in the range of 2.28 to 2.39 eV and flat-band potentials determined by application of the Mott-Schottky equation vary from -0.55 to -0.68 V versus normal hydrogen electrode.
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