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    Please use this identifier to cite or link to this item: http://ir.lib.ksu.edu.tw/handle/987654321/23281


    Title: 濺鍍成長IGZO/Cu:Cr/IGZO高導電薄膜特性研究
    The properties of IGZO/Cu:Cr/IGZO high conductivity films grown by sputtering
    Authors: 朱建璋;陳健安
    Contributors: 電機工程系
    林天財
    Date: 2015-04-07
    Issue Date: 2015-04-07 13:04:32 (UTC+8)
    Abstract: 本研究以濺鍍成長 IGZO 薄膜於塑膠基板及玻璃基板上,藉由改變製程壓力、製程時間與功率,獲得最佳光電特性薄膜。再以低電阻率的銅作為中間夾層,為提高金屬層的耐腐蝕性加入 Cr 與銅形成銅鉻合金。藉由搭配不同 Cu:Cr 合金成分之比例及不同 Cu:Cr 合金的製程時間,使 IGZO/Cu:Cr/IGZO 三明治結構之透明導電膜,可以同時具有耐蝕性、高導電性、及高的透光性。
    Appears in Collections:[電機工程系所] 學生專題

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