REDUCED STRESS OF GAN FILM ON SAPPHIRE USING AUTOMATIC FABRICATION OF TRENCH STRUCTURES

Please use this identifier to cite or link to this item: http://ir.lib.ksu.edu.tw/handle/987654321/20356

Title:	REDUCED STRESS OF GAN FILM ON SAPPHIRE USING AUTOMATIC FABRICATION OF TRENCH STRUCTURES
Authors:	C.F.Hsieh C. W. Chen C. H. Chen M. H. Liao
Contributor:	Industrial Technology Research Institute (ITRI) Department of Mechanical Engineering, National Taiwan University
Keywords:	Automation Stress GaN Curvature Laser Surface Structure
Date:	2013-11-02
Issue Date:	2013-11-14 12:00:04 (UTC+8)
Abstract:	Because of the different thermal expansion coefficients in these two materials, serious curvature and residual stress are existed during the growth of an epi-GaN layer on Sapphire. By using theoretical calculation and a simulation model analysis using the finite element method to describe the realistic shape of wafer curvature on epi-GaN wafers, we examine the influence which different thickness and thermal expansion coefficients in the top epi-GaN layer have on wafer curvature released. In addition a new automatic process to reduce wafer curvature and to relax residual stress is proposed. With an additional laser treatment on a sample surface after the growth of the top epi-GaN layer on a Sapphire substrate has taken place, the wafer curvature can be reduced from the original 45 m to 37 m in 2 inch wafer with an optimized surface structure design.
Appears in Collections:	[機械工程系所] Automation 2013- The 12th International Conference on Automation Technology

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