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    Please use this identifier to cite or link to this item: https://ir.lib.ksu.edu.tw/handle/987654321/19508


    Title: Electroluminescence from N-ZnO Nanowires/P-GaN Heterostructure Light-Emitting Diodes
    Authors: P.C.Chang
    E.G.Hsieh
    T.C.Lin
    Y.K.Su
    C.H.Chen
    S.P.Chang
    K.H.Lee
    S.J.Chang
    Contributor: Department of Electro-Optical Engineering, Kun Shan University
    Department of Electrical Engineering, Kun Shan University
    Department of Electrical Engineering and Institute of Microelectronics, National Cheng Kung University
    Keywords: ZnO nanowires
    P-GaN
    Blue light light emitting diode
    Date: 2010-10-13
    Issue Date: 2013-07-08 10:41:53 (UTC+8)
    Publisher: 崑山科技大學
    Abstract: The investigation explores the fabrication and characteristics of ZnO nanowire/ p-GaN/ ZnO nanowire heterojunction light emitting diodes (LED). Vertically aligned ZnO NWs arrays were grown on the p-GaN substrate by thermal chemical vapor deposition. The n-p-n heterojunction LED was successfully fabricated by combining ITO/glass substrate with the prepared ZnO nanowires /p-GaN substrate. The symmetrical rectifying behavior demonstrates that the heterostructure herein was formed with two p-n junction diodes and connected back to back. The room-temperature electroluminescent (EL) emission peak at 415 nm was attributed to the band offset at the interface between n-ZnO and p-GaN and defect-related emission from ZnO and GaN. Finally, the photograph indicated the LED clearly emitted blue light.
    Relation: 2010 海峽兩岸大學校長論壇暨科學技術研討會
    Appears in Collections:[機械工程系所] 2010 海峽兩岸大學校長論壇暨科學技術研討會

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