Kun Shan University Institutional Repository:Item 987654321/17439
English  |  正體中文  |  简体中文  |  全文筆數/總筆數 : 26362/26959 (98%)
造訪人次 : 11334772      線上人數 : 286
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
搜尋範圍 查詢小技巧:
  • 您可在西文檢索詞彙前後加上"雙引號",以獲取較精準的檢索結果
  • 若欲以作者姓名搜尋,建議至進階搜尋限定作者欄位,可獲得較完整資料
  • 進階搜尋

    請使用永久網址來引用或連結此文件: http://ir.lib.ksu.edu.tw/handle/987654321/17439

    題名: Pt/Al stacked metals gate MESFET
    作者: 黃文昌
    關鍵詞: MESFET;InP;Schottky contact;Al2O3
    日期: 2011-05
    上傳時間: 2012-09-10 14:02:30 (UTC+8)
    摘要: A new InP MESFET structure both with a gate structure of stacked metal and with a active channel of stacked layer is proposed. The gate metals are constituted by a double metal structure, Pt/Al. It improves the barrier height and reduces the reverse leakage current in the MFSFET. This is due to the formation of Al2O3, and becoming a Pt/Al/Al2O3/InP, metal-insulating-semiconductor structure in the gate region of the transistor. The conductive channel is constituted by a stack-layered structure, a n-InP layer and an i-InP layer. A transfer characteristics of excellent pitch off, and transconductance of 93 mS/mm is derived. It also shows a negative differential resistance effect on the MESFET. The illumination and temperature effect of the transistor are brought into discussed.
    關聯: Microelectronic Engineering, 88(5), 601-604
    顯示於類別:[光電工程系所] 期刊論文


    檔案 描述 大小格式瀏覽次數
    2011_5_MESFET.pdf994KbAdobe PDF319檢視/開啟


    ©Kun Shan University Library and Information Center
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 回饋