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    Please use this identifier to cite or link to this item: http://ir.lib.ksu.edu.tw/handle/987654321/17439

    Title: Pt/Al stacked metals gate MESFET
    Authors: 黃文昌
    Keywords: MESFET;InP;Schottky contact;Al2O3
    Date: 2011-05
    Issue Date: 2012-09-10 14:02:30 (UTC+8)
    Abstract: A new InP MESFET structure both with a gate structure of stacked metal and with a active channel of stacked layer is proposed. The gate metals are constituted by a double metal structure, Pt/Al. It improves the barrier height and reduces the reverse leakage current in the MFSFET. This is due to the formation of Al2O3, and becoming a Pt/Al/Al2O3/InP, metal-insulating-semiconductor structure in the gate region of the transistor. The conductive channel is constituted by a stack-layered structure, a n-InP layer and an i-InP layer. A transfer characteristics of excellent pitch off, and transconductance of 93 mS/mm is derived. It also shows a negative differential resistance effect on the MESFET. The illumination and temperature effect of the transistor are brought into discussed.
    Relation: Microelectronic Engineering, 88(5), 601-604
    Appears in Collections:[Graduate School and Department of Electro Optical Engineering] Periodical Articles

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