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    Please use this identifier to cite or link to this item: http://ir.lib.ksu.edu.tw/handle/987654321/17381


    Title: Logic circuit design using monostable–bistable transition logic element based on standard BiCMOS process
    Authors: 蔡澈雄
    Keywords: Logic circuit;MOBILE;Negative differential resistance circuit;Latch;BiCMOS process
    Date: 2011-02
    Issue Date: 2012-09-07 11:16:30 (UTC+8)
    Abstract: We present a monostable–bistable transition logic element (MOBILE) based on the negative-differentialresistance (NDR) circuit. In particular, this circuit can be completely implemented using the standard BiCMOS process. A traditionalMOBILE using two resonant tunneling diodes (RTD) connected in series is a functional logic circuit. The fabrication of RTD is utilized in the complicated molecular-beam-epitaxy (MBE) system. However, we present a MOBILE circuit that is completely made of standard Si-basedmetaloxide-semiconductor field effect transistors and SiGe-based heterojunction bipolar transistors. By suitably determining the control voltages and input conditions, we can obtain the operation of the inverter, AND and OR logic gates. Wealso demonstrate the latch characteristic of thisMOBILE circuit. This logic circuit is fabricated using the standard 0.35 mm BiCMOS process without the need for the MBE system.
    Relation: Microelectronics Journal, 42(2), 477-482
    Appears in Collections:[電子工程系所] 期刊論文

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