Kun Shan University Institutional Repository:Item 987654321/17378
English  |  正體中文  |  简体中文  |  全文筆數/總筆數 : 26379/26975 (98%)
造訪人次 : 11370997      線上人數 : 109
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
搜尋範圍 查詢小技巧:
  • 您可在西文檢索詞彙前後加上"雙引號",以獲取較精準的檢索結果
  • 若欲以作者姓名搜尋,建議至進階搜尋限定作者欄位,可獲得較完整資料
  • 進階搜尋


    請使用永久網址來引用或連結此文件: http://ir.lib.ksu.edu.tw/handle/987654321/17378


    題名: Electrical characteristics and inhomogeneous barrier analysis of Al/NPB/p-Si Schottky diodes
    作者: 黃文昌
    關鍵詞: Schottky contact;Inhomogeneous barrier height;Series resistance
    日期: 2011-03
    上傳時間: 2012-09-07 11:02:01 (UTC+8)
    摘要: The current–voltage–temperature (I–V–T) characteristics of Al/NPB/p-Si Schottky diodes were discussed in detail in this paper. It shows an abnormal decrease of the Schottky barrier height and increase of ideality factor as the decrease of measured temperature. The series resistance was evaluated and it is found that the series resistance increases as the increase of the measurement temperature. The Gauss distribution of the inhomogeneous of the barrier was brought to discuss the contact interface. The characteristics have been interpreted based on the thermionic emission (TE) mechanism with Gaussian distribution of the barrier heights of /b0 is 0.96 eV and standard deviation rso is equal to 0.13 V. In addition, the ln(I0/T2) vs. 1/T plot yields the effective Richardson constant of 1.47  102 A cm2 K2 for the Al/NPB/Si diode which is lower than the known value of 32 A cm2 K2 for Si. This deviation is attributed to the inhomogeneous barrier heights and potential fluctuations at the contact interface that consists of low and high barrier areas. The modified Richardson plot shows a straight line relationship between lnðJs=T2Þ  ðq2r2 so=2k2T2Þ vs. 1000/T, and gives a value of A* = 30.1 A cm2 K2.
    關聯: Microelectronic Engineering, 88(3), 287-292
    顯示於類別:[電子工程系所] 期刊論文

    文件中的檔案:

    檔案 描述 大小格式瀏覽次數
    2011_3_NPB_MEE7506.pdf890KbAdobe PDF374檢視/開啟


    在KSUIR中所有的資料項目都受到原著作權保護.


    本網站之所有圖文內容授權為崑山科技大學圖書資訊館所有,請勿任意轉載或擷取使用。
    ©Kun Shan University Library and Information Center
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 回饋