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    Please use this identifier to cite or link to this item: http://ir.lib.ksu.edu.tw/handle/987654321/17377


    Title: Electrical and structural properties of a stacked metal layer contact to n-InP
    Authors: 黃文昌
    Keywords: InP;Al2O3;Schottky barrier inhomogeneity
    Date: 2011-02
    Issue Date: 2012-09-07 10:59:04 (UTC+8)
    Abstract: In this study, we found that the double metal contact structure in Pt/Al/n-InP diodes provides better rectification characteristics than conventional single-metal/n-InP Schottky diodes. The effective barrier height was measured to be 0.67 eV for a 400 ◦C-annealed Pt/Al/n-InP diode sample. The increase in the barrier height is attributed to the formation of Al2O3 at the metal/n-InP contact interface during thermal annealing. The formation of the phase Al2O3 phase was monitored by X-ray diffraction (XRD) analysis. The corresponding element profiles of Al and O were also confirmed at the metal/n-InP contact interface using secondary ion mass spectrum (SIMS) analysis. The lowering of the Schottky barrier height due to the inhomogeneity at the metal/n-InP junction is also discussed on the basis of the TE theory. The distribution of local effective Schottky barrier heights was explained by a model incorporating the existence of double Gaussian barrier heights, which represent the high barrier and low barrier of the full distribution in the temperature ranges of 83–198 and 198–300 K.
    Relation: Applied surface Science, 257(8), 3565-3569
    Appears in Collections:[電子工程系所] 期刊論文

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