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    Please use this identifier to cite or link to this item: http://ir.lib.ksu.edu.tw/handle/987654321/17374

    Title: Improvement of a-plane GaN crystalline quality by overgrowth of in situ etched GaN template
    Authors: 蘇炎坤
    Keywords: A1. Etching;A3. Metalorganicvaporphaseepitaxy;B1. Nitrides;B2. SemiconductingIII–Vmaterials
    Date: 2011-01
    Issue Date: 2012-09-07 10:42:33 (UTC+8)
    Abstract: This study demonstrates improvement of crystalline quality of a-plane GaN by growing it on a porous GaN template fabricated by in situ etching of a first GaN film using hydrogen and ammonia gases at 1150 1C in a metal organic chemical vapor deposition(MOCVD)reactor.Photoluminescence(PL) and high-resolution X-ray diffraction(HR-XRD)measurements show that the crystalline quality of the GaN film re-grown on the porous GaN template was superior to the quality of the initially grown GaN film.This study demonstrates a simple,short procedure for growing high quality a-GaN using a single MOCVD tool without ex situ processes.
    Relation: JOURNAL OF CRYSTAL GROWTH, 315(1), 192-195
    Appears in Collections:[電機工程系所] 期刊論文

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