Kun Shan University Institutional Repository:Item 987654321/17373
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    題名: Effects of Trimethylgallium Flow Rate on a-Plane GaN Growth on r-Plane Sapphire during One-Sidewall-Seeded Epitaxial Lateral Overgrowth
    作者: 蘇炎坤
    日期: 2011-03
    上傳時間: 2012-09-07 10:32:22 (UTC+8)
    摘要: The high crystalline quality of a-plane GaN growth on r -plane sapphire has been demonstrated successfully by using one-sidewall-seeded epitaxial lateral overgrowth (OSELOG). The dislocation density of OSELOG-grown GaN film is 3–4 orders of magnitude lower than that of the asgrown film and the coalescence thickness of OSELOG-grown GaN is less than 5 m. Low temperature cathodoluminescence (CL) shows that the optimum trimethylgallium (TMGa) flow rate during OSELOG plays a significant role in enhancing the crystalline quality of a-plane GaN. The crystalline quality of a-plane GaN can be effectively improved using OSELOG compared with the other ELOG approaches.
    關聯: APPLIED PHYSICS EXPRESS, 4(3), 035501-1-3
    顯示於類別:[電機工程系所] 期刊論文

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