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    Please use this identifier to cite or link to this item: http://ir.lib.ksu.edu.tw/handle/987654321/17373


    Title: Effects of Trimethylgallium Flow Rate on a-Plane GaN Growth on r-Plane Sapphire during One-Sidewall-Seeded Epitaxial Lateral Overgrowth
    Authors: 蘇炎坤
    Date: 2011-03
    Issue Date: 2012-09-07 10:32:22 (UTC+8)
    Abstract: The high crystalline quality of a-plane GaN growth on r -plane sapphire has been demonstrated successfully by using one-sidewall-seeded epitaxial lateral overgrowth (OSELOG). The dislocation density of OSELOG-grown GaN film is 3–4 orders of magnitude lower than that of the asgrown film and the coalescence thickness of OSELOG-grown GaN is less than 5 m. Low temperature cathodoluminescence (CL) shows that the optimum trimethylgallium (TMGa) flow rate during OSELOG plays a significant role in enhancing the crystalline quality of a-plane GaN. The crystalline quality of a-plane GaN can be effectively improved using OSELOG compared with the other ELOG approaches.
    Relation: APPLIED PHYSICS EXPRESS, 4(3), 035501-1-3
    Appears in Collections:[電機工程系所] 期刊論文

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