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    Please use this identifier to cite or link to this item: http://ir.lib.ksu.edu.tw/handle/987654321/17372


    Title: Enhanced luminescence of GaN-based light-emitting diodes by selective wet etching of GaN/sapphire interface using direct heteroepitaxy laterally overgrowth technique
    Authors: 蘇炎坤
    Keywords: Light-emitting diodes (LEDs);Directly heteroepitaxial lateral overgrowth (DHELO);Selective wet etching
    Date: 2011-04
    Issue Date: 2012-09-07 10:29:53 (UTC+8)
    Abstract: We introduce a method to enhance the luminescence of GaN-based LEDs by combining the direct heteroepitaxy laterally overgrowth (DHELO) technique with selective wet etching process. The epitaxial overgrowth of GaN layers on sapphire substrate with SiO2 micro-rods array exhibited a reduced dislocation density and improved the crystal quality. The EL intensity of LEDs with SiO2 micro-rods array was 6.5% higher than conventional LEDs at 20 mA. The selective wet etching process was then used to texture the LED sidewalls into inverted pyramid shape. Finally, the EL intensity could be further enhanced about 12.5% as compared with LEDs with SiO2 micro-rods array when adopting the textured sidewalls.
    Relation: DISPLAYS, 32(2), 96-99
    Appears in Collections:[電機工程系所] 期刊論文

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