English  |  正體中文  |  简体中文  |  Items with full text/Total items : 25395/25990 (98%)
Visitors : 6185041      Online Users : 30
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version


    Please use this identifier to cite or link to this item: http://ir.lib.ksu.edu.tw/handle/987654321/15512


    Title: 具有高峰值與谷值電流比之MOS-HBT-NDR記憶器電路
    Authors: 蔡澄雄
    Contributor: 研究發展處
    Date: 2011-06-01
    Issue Date: 2011-12-03 10:32:04 (UTC+8)
    Appears in Collections:[企業管理系所] 專利發明

    Files in This Item:

    File Description SizeFormat
    創作發明-王文彥-專利說明書(手機藍芽點名系統).pdf專利說明書221KbAdobe PDF0View/Open
    創作發明-王文彥-專利證書(手機藍芽點名系統).JPG專利證書258KbJPEG0創作發明-王文彥-專利證書(手機藍芽點名系統).JPG.jpg
    View/Open


    All items in KSUIR are protected by copyright, with all rights reserved.


    本網站之所有圖文內容授權為崑山科技大學圖書資訊館所有,請勿任意轉載或擷取使用。
    ©Kun Shan University Library and Information Center
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback