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    Please use this identifier to cite or link to this item: http://ir.lib.ksu.edu.tw/handle/987654321/14329

    Title: 高頻熱電子半導體金屬基極電晶體
    High-frequency Operation of Hot-electron Metal-Base Transistor
    Authors: 卓信誠
    Keywords: 高頻
    metal-base transistor
    Date: 2007-11-29
    Issue Date: 2008-01-02 11:47:26 (UTC+8)
    Abstract: 本論文中,利用電漿助長化學氣相沈積法(PECVD),在玻璃基板上,製造出一種新的氫化非晶矽/ 碳化矽異質接面金屬基極電晶體。經證實此元件具有一般典型電晶體的操作特性,由實驗量得,當射極電流為 0.2 毫安,集極電流為 7.5×104 V/cm 時,其共基組態的電流轉換比為 9.75%,並由此電流轉換比,可求出 Pt 的躍進平均自由徑為 97 埃。
    A new amorphous silicon/silicon carbide metal-base transistor has been successfully fabricated on an ITO/glass substrate by plasma-enhanced chemical vapor deposition (PECVD). The operating characteristics of the transistor effect and evidence for true injection have been observed. The measured common-base current-transfer ratio is 9.75% at a collector field of 7.5×104V/cm and an emitter current of 0.2 mA. The ballistic mean free path in Pt obtained from the current-transfer ratio is 97 Å.
    Appears in Collections:[資訊科技學院 ] 2007年優質家庭生活科技(U-home)之關鍵技術研討會

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