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    Please use this identifier to cite or link to this item: http://ir.lib.ksu.edu.tw/handle/987654321/13034


    Title: 溅鍍成長氮化鋁薄膜之光學能譜分析
    Authors: 林天財;蘇良慶;林政頤
    Contributor: 電機工程系
    啟翔科技有限公司
    Date: 2010-11-26
    Issue Date: 2010-12-31 11:14:34 (UTC+8)
    Abstract: 本研究利用中頻反應性磁控濺鍍技術成長氮化鋁薄膜,藉由改變氮氣濃度(10%、20%、30%),固定底壓(1pa)、溅鍍功率固定(50w)、溅鍍時間固定(5min)、固定基板高度(6cm),溅鍍沉積於玻璃上,再利用光譜分析儀分析探討不同氮氣濃度對氮化鋁薄膜透光性。實驗結果顯示,在同樣的製程中,隨著氮氣濃度增加其透光性越好
    Relation: 崑山科技大學產學合作計畫
    Appears in Collections:[電機工程系所] 研究計畫

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    氮化鋁結案報告書-林天財.doc561KbMicrosoft Word2943View/Open
    氮化鋁結案報告書-林天財.pdf448KbAdobe PDF1029View/Open


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