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    Please use this identifier to cite or link to this item: http://ir.lib.ksu.edu.tw/handle/987654321/12210

    Title: A generalized-analytic-formulae dependent methodology for efficient modeling of HBTs in RF-SoC applications
    Authors: 曾憲正;Tseng Hsien-Cheng
    周榮華;Chou Jung-Hua
    Contributor: Department of Electronic Engineering and Nano R&D Center, Kun Shan University
    Department of Engineering Science, National Cheng Kung University
    Keywords: analytic modeling
    generalized analytic formulae (GAF)
    heterojunction bipolar transistors(HBTs)
    Date: 2007-07
    Issue Date: 2010-12-03 16:33:17 (UTC+8)
    Publisher: 崑山科技大學
    Abstract: An efficient methodology is devised to determine complete equivalent-circuit elements of
    radio-frequency (RF) heterojunction bipolar transistors (HBTs). This approach exploits a set
    of succinct generalized-analytic-formulae (GAF), particularly including the extrinsic
    inductances (Lb, Lc, Le) and base-collector capacitances (Cex, Cbc), which are crucial
    parameters for characterizing HBT-based circuit performances at microwave frequencies. The
    proposed modeling method has been validated treating the p-n-p InGaAs collector-up HBT
    with a graded base of 25 nm, which can be implemented in RF-SOC applications. Good
    extraction results demonstrate the usefulness of this innovative technique.
    Relation: 崑山科技大學學報第四期 第33~41 頁(民國96 年7 月)
    Journal of Kun Shan University, Vol.4, pp.33~41(Jul, 2007)
    Appears in Collections:[崑山科技大學學報] 第4期

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