Sb-doped AgIn5S8 polycrystalline films were grown on indium–tin–oxide coated glass substrates using
solution growth technique. New procedures for growing Sb-doped Ag–In–S system photocatalyst films are
presented. The influences of various deposition parameters on structural, optical, and photoelectrochemical
properties of samples were investigated. The X-ray diffraction patterns of samples demonstrate the
presence of polycrystalline AgIn5S8 phase in these films. The thicknesses and energy band gaps obtained
from transmittance data are in the ranges of 538–1018nm and 1.72–1.73 eV, respectively. The flat band
potentials of these samples are in the range of −4.097 to −5.217V vs. an absolute electron potential; the
potentials become more negative with an increase in Sb ion in reaction solution. With a molar ratio of
Sb/Ag in precursor solution higher than 0.2, the conduction type of samples turns into p-type semiconductor.
The maximum photocurrent density of samples with an external potential set at 3.5V was found
to be −4.76mA/cm2 under illumination using a 300 Xe lamp system.