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    Please use this identifier to cite or link to this item: http://ir.lib.ksu.edu.tw/handle/987654321/10792

    Title: Effect of Sb on the growth and photoelectrochemical response of AgIn5S8 film electrodes created by solution growth technique
    Authors: Kong-Wei Cheng
    Chao-Ming Huang(黃昭銘)
    Guan-Ting Pa
    Wen-Sheng Chang
    Tai-Chou Lee
    Thomas C.K. Yang
    Contributor: 圖書資訊館
    Keywords: Catalysis
    Electronic materials
    Date: 2010-01
    Issue Date: 2010-09-13 15:07:35 (UTC+8)
    Abstract: Sb-doped AgIn5S8 polycrystalline films were grown on indium–tin–oxide coated glass substrates using
    solution growth technique. New procedures for growing Sb-doped Ag–In–S system photocatalyst films are
    presented. The influences of various deposition parameters on structural, optical, and photoelectrochemical
    properties of samples were investigated. The X-ray diffraction patterns of samples demonstrate the
    presence of polycrystalline AgIn5S8 phase in these films. The thicknesses and energy band gaps obtained
    from transmittance data are in the ranges of 538–1018nm and 1.72–1.73 eV, respectively. The flat band
    potentials of these samples are in the range of −4.097 to −5.217V vs. an absolute electron potential; the
    potentials become more negative with an increase in Sb ion in reaction solution. With a molar ratio of
    Sb/Ag in precursor solution higher than 0.2, the conduction type of samples turns into p-type semiconductor.
    The maximum photocurrent density of samples with an external potential set at 3.5V was found
    to be −4.76mA/cm2 under illumination using a 300 Xe lamp system.
    Relation: Chemical Engineering Science、v.65,issue1、 p74-79
    Appears in Collections:[環境工程系所] 期刊論文

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