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    Please use this identifier to cite or link to this item: http://ir.lib.ksu.edu.tw/handle/987654321/10716


    Title: Effect of Al Thickness on the Al Induced Low Temperature Poly-Si Film Crystallization Process
    Authors: 朱孝業(Hsiao Yeh Chu)
    Ming-Hang Weng
    Ru-Yuan Yang
    Chien-Wei Huang
    Chia-Hsing Li
    Contributors: 圖書資訊館
    Keywords: low temperature polycrystalline silicon
    metal induced crystallization
    aluminum induced crystallization
    film thickness
    Date: 2009-01
    Issue Date: 2010-07-09 16:38:58 (UTC+8)
    Abstract: In our previous study, we fabricates large grain low
    temperature poly-crystalline silicon film by aluminum induced
    crystallization (AIC) method. The fabrication process is to
    deposite aluminum layer on top of the a-Si:H film deposited by
    plasma enhanced chemical vapor deposition (PECVD) [1]. In this
    paper, we discussed more about the effect of different aluminum
    thickness of the AIC process. Five kinds of specimens with
    different aluminum thickness of, 10, 20, 40, 80, and 160 nm,
    respectively; are fabricated and tested. The annealing
    temperature is set at 350°C and 30 min in the annealing stage.
    The crystallinity of the annealed silicon film is discussed in this
    paper. XRD and Raman spectra analysis are used to identify the
    crystallinity of specimens made under different aluminum
    thicknesses. Raman results show that a-Si film will be crystallized
    if the Al film thickness is over 40 nm aluminum thickness. The
    crystallinity volume fraction calculated is about 45~90%. The I-V
    characteristic is tested to see the magnitude of leakage current of
    poly silicon film made in our study.
    Relation: Proceedings of the 4th IEEE Int. Conf. on Nano/Micro Engineered and Molecular Systems
    Appears in Collections:[機械工程系所] 期刊論文

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