Kun Shan University Institutional Repository:Item 987654321/10571
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    题名: The Development of the High Performance Parallel-Stacked RF Spiral Inductor
    作者: 翟大鈞(D.K. Jair)
    M. C. Hsieh
    C. S. Lin
    S. M. Chen
    Y. H. Chen
    贡献者: 圖書資訊館
    日期: 2009-04
    上传时间: 2010-06-11 16:15:19 (UTC+8)
    摘要: In this work, deep sub-micron CMOS process compatible high Q on chip spiral inductors with air- gap structure and parallel stacked inductor have been fabricated with 0.18μm CMOS compatible process. In the design the electromagnetic solver, SONNET, and the finite element program, ANSYS, were used for electrical-characteristics and maximum mechanical strength, respectively. Experimental results show that measured peak Q and peak-Q frequency attain 7.06 and 1.8GHz for the structure of four metal layers parallel and metal width of 15um at 5.5 turns, respectively and 5.2 and 1.6GHz for the suspending spiral inductor. Besides, the experimental results also shows the parallel stacked structure saves the chip area significantly and reduces resistance to obtain high Q value at low frequency significantly.
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