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    Please use this identifier to cite or link to this item: http://ir.lib.ksu.edu.tw/handle/987654321/6155

    Title: Synthesis and microstructure of the Ti3SiC2 in SiC matrix grown by chemical vapor deposition
    Authors: Tien-Chai Lin (林天財)
    Min-Hsiung Hon
    Keywords: B. Composites
    C. Hardness
    D. Carbides
    Chemical vapor deposition
    Date: 2008
    Issue Date: 2009-12-29 15:33:32 (UTC+8)
    Abstract: Ti3SiC2 + SiC and TiC + SiC were deposited on graphite substrate at 1300–1600 8C by chemical vapor deposition with TiCl4, SiCl4, C3H8, H2 as reactive gases. Process parameters such as temperature, pressure, concentration of C3H8 were varied to study their effects on the phases and microstructure of the deposited layers. The results show that binary phases of Ti3SiC2 + SiC are formed at temperature less than 1400 8C. For temperature above 1500 8C, TiC + SiC phases are formed. Increase of the process pressure causes the disappearance of Ti3SiC2 and the formation of TiC. The surface morphology of Ti3SiC2 shows a plate-like structure. The hardness of Ti3SiC2 + SiC and TiC + SiC is HV4251 and HV4612 respectively for a load of 10 g.
    Relation: Ceramics International, 34 (2008) 631-638
    Appears in Collections:[電機工程系所] 期刊論文

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